New Product Announcement

Announcing the latest additions to Qorvo's innovative RF portfolio of control products, amplifiers and transistors, which serve a wide range of commercial and defense applications.

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300MHz-6GHz Absorptive SOI SPDT RF Switch
RFSW6024 Features
  • Isolation: 60dB @ 2GHz
  • Loss: 0.7dB @ 2GHz
  • IIP3: 67dBm
  • Input P1dB: 37dBm
  • No blocking caps needed unless voltage on RF line
  • 4x4mm QFN
  • Ideal for wireless infrastructure, broadband & high-performance communications systems
  • ECCN: 5A991G

Additional Information:
RFSW6024

5MHz-6GHz SOI Digital Step Attenuators (DSAs)
RFSA3523 & RFSA3623 Features
  • 5 bits, 15.5dB range, 0.5dB step (RFSA3523)
  • 6 bits,15.75dB range, 0.25dB step (RFSA3623)
  • Serial interface & addressable (up to 8 addresses)
  • IIP3: >55dBm
  • Input P0.1dB: 30dBm
  • 3x3mm QFN
  • Ideal for wireless infrastructure, broadband & test equipment
  • ECCN: 5A991G

Additional Information:
RFSA3523, RFSA3623

0.1-31GHz 5-Bit DSA
TGL2223 Features
  • Attenuation range: 15.5dB
  • RMS attenuation error: <0.9dB
  • RMS step error: <0.4dB
  • Die size: 1.18x0.8mm
  • Ideal for radar, communications, EW & other general purpose RF
  • ECCN: EAR99

Additional Information:
TGL2223

GaAs Ka-Band 1W PAs
TGA4537-SM (29-35GHz) & TGA4544-SM (26-31GHz) Features
  • Psat: 31-32dBm
  • P1dB: 30-31dBm
  • Integrated power detector
  • Bias: Vd = 6V, Idq = 1100mA, Vg = -0.7V typical
  • 5x5mm ACQFN
  • Ideal for VSAT & PtP
  • ECCN: 3A001.b.2.d

Additional Information:
TGA4537-SM, TGA4544-SM

2-18GHz 5W GaN PA
TGA2214 Features
  • 2-18GHz instantaneous band coverage
  • Psat: 5W (CW)
  • LS gain: 14dB
  • Die size: 3x5mm
  • Ideal for instrumentation, EW, radar & communications
  • ECCN: 3A001.b.2.c

Additional Information:
TGA2214

8-11GHz 50W GaN PA
TGA2238-CP Features
  • Psat: 50W (pulsed)
  • PAE: 34%
  • LS gain: 24dBm
  • 15.2x15.2mm Cu-base, bolt-down package
  • Ideal for X-band radar & communications
  • ECCN: ITAR

Additional Information:
TGA2238-CP

13-18GHz 2W GaN Driver
TGA2958 Features
  • Psat: 2W (CW)
  • PAE: >25%
  • SS gain: 25dBm
  • Die size: 1.25x2.14mm
  • Ideal for Ku-band radar & communications
  • ECCN: EAR99

Additional Information:
TGA2958

13-15.5GHz 35W GaN PA
TGA2239 Features
  • Psat: 35W (CW)
  • PAE: 32%
  • LS gain: 24dBm
  • Die size: 5x6.65mm
  • Ideal for Ku-band communications
  • ECCN: 3A001.b.2.b

Additional Information:
TGA2239

27.5-31GHz 8W GaN PA
TGA2595-CP Features
  • Psat: 8W (CW)
  • PAE: >22%
  • LS gain: 21dBm
  • 15.2x15.2mm Cu-base, bolt-down package
  • Ideal for Ka-band communications
  • ECCN: 3A001.b.2.c

Additional Information:
TGA2595-CP

GaN Transistors
TGF2965-SM Features
  • Frequency: 30MHz-3GHz
  • 50 ohm input matched
  • P3dB: 5W
  • PAE: 50%
  • SS gain: 17dB
  • CW & pulse capable
  • 3x3mm plastic SMT package
  • Ideal for Milcom & radar applications
  • ECCN: EAR99

Additional Information:
TGF2965-SM

TGF2929-FL & TGF2929-FS Features
  • Frequency: DC-3.5GHz
  • P3dB: 106W
  • PAE: 51%
  • SS gain: 15dB
  • Prematched for S-band
  • NI-360 package, eared & earless
  • Ideal for radar applications
  • ECCN: EAR99

Additional Information:
TGF2929-FL, TGF2929-FS

Contacts and Addresses