CEL replacements for discontinued Renesas RF productsRenesas has decided to withdraw from the microwave semiconductor device business as described in their press release. There are CEL direct drop-in replacement parts for many of the Renesas microwave devices that are being discontinued, including all RF switches and most of the low noise GaAs FETs (pHEMTs). The complete End of Life (EOL) list of parts is available in this pdf.
RF ComponentsCEL California Eastern Laboratories designs and manufactures a range of RF components, using the world's number one GaAs foundry. Many of them are direct replacements for discontinued Renesas parts at reduced cost and improved performance.
Download CEL's Conflict Minerals Statement.
RFIC SwitchesCEL offers a wide range of RFIC Switches (SPDT, SP3T, DPDT) in industry standard and miniaturized packages.
Control voltages are 1.8V, 3V and 5V.
They are used in WIFI routers and modules, Bluetooth, ISM band applications like wireless headsets and many other VHF and UHF applications.
Characteristics are typ. at 2.5 GHz at room temperature.
|Part No.||Type||Max. Frequency (GHz)||Insertion Loss (dB)||Isolation (dB)||P0.1dB (dBm)||P1dB (dBm)||Package Style|
CG2179M2-Q is qualified according to AECQ100.
Download CEL RF switch selection guide.
Small Signal GaAs FETs replacing RenesasCEL offers industry-leading Low Noise GaAs FET devices. Exceptional noise figure performance at frequencies past 20GHz are achieved in both ceramic and plastic packages.
CEL is continously designing new devices as replacements for discontinued Renesas parts. If you do not find the product you need please ask us as it might be in the pipeline already. Here is the list of currently available GaAs FET LNAs which are ideal for C-band, X-band, Ku-band and K-band applications.
|Part No.||Replacement for:||Typical Usage||Test Freq.||VDS (V)||IDS (mA)||Noise Figure||Gain||Package Style|
X-band, Ku-band, 24GHz oscillators
|2nd stage at X-band, Ku-band||12GHz||2||10||0.42dB||12.2dB||Plastic SMD|
|CE3520K3||NE3520S03||1st stage up to 24GHz||20GHz||2||10||0.55dB||13.8dB||Micro-X|
|CE3521M4||NE3521M04||2nd or 3rd stage at 20GHz||20GHz||2||10||0.70dB||11.9dB||Plastic SMD|
|1.575 GHz||3||15||0.40dB||17.0dB||Plastic SMD|
CA3509M4 is a low noise amplifier with on-chip bias supply and on-chip ESD protection.